L40 半导体分立器件综合 标准查询与下载

IEC PAS 60191-6-19:2008 半导体装置的机械标准化.第6-19部分:升温时包裹热变形和最大允许热变形的测量方法

This PAS stipulates the package warpage criteria and the package warpage measurement methods at elevated temperature for BGA, FBGA, and FLGA.

Mechanical standardization of semiconductor devices - Part 6-19: Measurement methods of package warpage at elevated temperature and the maximum permissible warpage

ASTM D3004-08(2013) 挤制热固性和热塑性半导体和绝缘屏蔽的标准规范

1.1 This specification covers crosslinked and thermoplastic extruded semi-conducting, conductor and insulation shielding materials for electrical wires and cables. 1.2 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard. 1.3 In many instances, the electrical properties of the shielding material are strongly dependent on processing conditions. For this reason, in this specification the material is sampled from cable. Therefore, tests are done on shielded wire in this standard solely to determine the relevant property of the shielding material and not to test the conductor or completed cable.

Standard Specification for Crosslinked and Thermoplastic Extruded Semi-Conducting, Conductor and Insulation Shielding Materials

DIN EN 60191-1:2007 半导体器件的机械标准.第1部分:分立器件外形图准备的一般规则

Mechanical standardization of semiconductor devices - Part 1: General rules for the preparation of outline drawings of discrete devices (IEC 60191-1:2007); German version EN 60191-1:2007

DIN EN 60191-6-16:2007 半导体器件的机械标准.第6-16部分:半导体试验术语表和BGA、LGA、FBGA和FLGA型老化座孔

Mechanical standardization of semiconductor devices - Part 6-16: Glossary of semiconductor tests and burn-in sockets for BGA, LGA, FBGA and FLGA (IEC 60191-6-16:2007); German version EN 60191-6-16:2007

IEC 60747-16-2:2001/AMD1:2007 半导体器件.第16-2部分:微波集成电路.频率预定标器

This standard is Semiconductor devices - Part 16-2: Microwave integrated circuits - Frequency prescalers; Amendment 1.

Semiconductor devices - Part 16-2: Microwave integrated circuits - Frequency prescalers; Amendment 1

DIN EN 60747-16-1:2007 半导体器件.第16-1部分:微波集成电路.放大器

Semiconductor devices - Part 16-1: Microwave integrated circuits - Amplifiers (IEC 60747-16-1:2001 + A1:2007); German version EN 60747-16-1:2002 + A1:2007

IEC 60747-9:2007 半导体装置.分立器件.第9部分:绝缘栅双极晶体管(IGBTs)

This part of IEC 60747 gives product specific standards for terminology，letter symbols， essential ratings and characteristics，verification of ratings and methods of measurement for insulated—gate bipolar transistors(IGBTs)．

Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs)

IEC TR 62258-4:2007 半导体压模产品.第4部分:压模用户和供应商调查表

This part of IEC 62258 has been developed to facilitate the production, supply and use of semiconductor die products, including ? wafers; ? singulated bare die; ? die and wafers with attached connection structures; ? minimally or partially encapsulated die and wafers. This technical report contains a questionnaire, based on the requirements of other parts of IEC 62258, which may be used in negotiations and contracts between suppliers and purchasers of die devices. It is intended to assist all those involved in the supply chain for die devices to comply with the requirements of the IEC 62258-1 and IEC 62258-2 standards. It should be recognized that the tables contained in this technical report form a checklist of information that can potentially be supplied and that it may not be relevant or possible to complete all fields. Different markets may require different subsets of the information requested herein.

Semiconductor die products - Part 4: Questionnaire for die users and suppliers

BS IEC 60191-1:2007 半导体器件的机械标准.分立器件外形图准备的一般规则

This part of IEC 60191 gives guidelines on the preparation of outline drawings of discrete devices. NOTE For preparation of outline drawings of surface mounted discrete devices, IEC 60191-6 should be referred to as well.

Mechanical standardization of semiconductor devices - General rules for the preparation of outline drawings of discrete devices

BS EN 60191-6-16:2007 半导体器件的机械标准化 球栅阵列封装(BGA),栅格阵列(LGA),栅阵列(FBGA)和距基板栅格阵列(FLGA)用老化插座和半导体测试的术语表

This part of IEC 60191 gives a glossary of semiconductor sockets for BGA, LGA, FBGA and FLGA. This standard intends to establish definitions and unification of terminology relating to tests and burn-in sockets for BGA, LGA, FBGA and FLGA.

Mechanical standardization of semiconductor devices - Glossary of semiconductor tests and burn-in sockets for BGA, LGA, FBGA and FLGA

DLA SMD-5962-96517 REV D-2007 抗辐射互补金属氧化物半导体六角倒相器晶体管兼容输入 硅单片电路线型微电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN).

MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, HEX INVERTER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON

DLA SMD-5962-96547 REV C-2007 抗辐射数字的互补金属氧化物半导体,双重2行到4行解码器或信号分离器,晶体管兼容输入硅单片电路线型微电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, DUAL 2-LINE TO 4-LINE DECODER/DEMULTIPLEXER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON

DLA SMD-5962-90817 REV C-2007 硅单块 高速结型场效应晶体管,双操作增强器,直线型微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

MICROCIRCUIT, LINEAR, OPERATIONAL AMPLIFIER, DUAL, JFET, HIGH SPEED, MONOLITHIC SILICON

DLA SMD-5962-94673 REV A-2007 数字的先进双极互补金属氧化物半导体,八进制缓冲器或25欧姆线路激励器串联电阻器,和转化输出晶体管兼容输入硅单片电路线型微电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN).

MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, OCTAL BUFFER/DRIVER WITH 25 OMEGA SERIES RESISTOR AND NONINVERTING THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON

DLA SMD-5962-95816 REV A-2007 互补金属氧化物半导体,16-BIT接收器或三状态输出寄存器,晶体管兼容输入硅单片电路线型微电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.

MICROCIRCUIT, DIGITAL, ADVANCED CMOS, 16-BIT TRANSCEIVER/REGISTER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON

IEC 60191-2:1966/AMD16:2007 半导体器件的机械标准化.第2部分:尺寸.修改件16

This standard is Mechanical standardization of semiconductor devices - Part 2: Dimensions; Amendment 16.

Mechanical standardization of semiconductor devices - Part 2: Dimensions; Amendment 16

DLA SMD-5962-95841 REV A-2007 双极互补金属氧化物半导体,16-BIT母线接收器和三状态输出寄存器,晶体管输入 硅单片电路线型微电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN)

MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 16-BIT BUS TRANSCEIVER AND REGISTER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON

DLA SMD-5962-95842 REV A-2007 双极互补金属氧化物半导体 18-BIT母线接收器双稳态多谐振荡器,晶体管兼容输入硅单片电路线型微电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.

MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 18-BIT BUS-INTERFACE FLIP-FLOP WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON

DLA SMD-5962-95831 REV D-2007 双极互补金属氧化物半导体,3.3伏特八角触发D类三状态输出双稳态多谐振荡器,晶体管兼容输入硅单片电路线型微电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.

MICROCIRCUIT, DIGITAL, ADVANCED BICMOS, 3.3 VOLT OCTAL TRANSPARENT D-TYPE LATCH WITH BUS HOLD, THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON

DLA SMD-5962-94672 REV A-2007 数字的先进双极互补金属氧化物半导体,18-BIT母线接口和双稳态多谐振荡器转化输出晶体管兼容输入硅单片电路线型微电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.

MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, SCAN TEST DEVICE WITH 18-BIT UNIVERSAL BUS TRANSCEIVER, THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON