L40 半导体分立器件综合 标准查询与下载

KS C IEC 60749-31:2006 半导体器件.机械和气候试验方法.第31部分:塑料密封器件的易燃性(内部感应)

이 규격은 반도체 소자(개별 소자 및 집적 회로)에 적용 가능하다.이 시험의 목적은 과

Semiconductor devices-Mechanical and climatic test methods-Part 31:Flammability of plastic-encapsulated devices(internally induced)

DIN EN 62047-1:2006 半导体装置.微型机电装置.第1部分:术语和定义(IEC 62047-1-2005)

Semiconductor devices - Micro-electromechanical devices - Part 1: Terms and definitions (IEC 62047-1:2005); German version EN 62047-1:2006

BS EN 60749-26:2006 半导体器件.机械和气候试验方法.静电放电(ESD)灵敏度测试.人体模型(HBM)

This part of IEC 60749 establishes a standard procedure for testing and classifying semiconductor devices according to their susceptibility to damage or degradation by exposure to a defined human body model (HBM) electrostatic discharge (ESD). The objective is to provide reliable, repeatable HBM ESD test results so that accurate classifications can be performed. This test method is applicable to all semiconductor devices and is classified as destructive. ESD testing of semiconductor devices is selected from this test method, the machine model (MM) test method (see IEC 60749-27) or other ESD test methods in the IEC 60749 series. The HBM and MM test methods produce similar but not identical results; unless otherwise specified, this test method is the one selected.

Semiconductor devices - Mechanical and climatic test methods - Electrostatic discharge (ESD) sensitivity testing - Human body model (HBM)

BS EN 60749-27:2006 半导体器件.机械和气候试验方法.静电放电(ESD)灵敏度测试.机器模型(MM)

This part of IEC 60749 establishes a standard procedure for testing and classifying semiconductor devices according to their susceptibility to damage or degradation by exposure to a defined machine model (MM) electrostatic discharge (ESD). It may be used as an alternative test method to the human body model ESD test method. The objective is to provide reliable, repeatable ESD test results so that accurate classifications can be performed. This test method is applicable to all semiconductor devices and is classified as destructive. ESD testing of semiconductor devices is selected from this test method, the human body model (HBM – see IEC 60749-26) or other test methods in the IEC 60749 series. The MM and HBM test methods produce similar but not identical results. Unless otherwise specified, the HBM test method is the one selected.

Semiconductor devices - Mechanical and climatic test methods - Electrostatic discharge (ESD) sensitivity testing - Machine model (MM)

BS EN 62373:2006 金属氧化半导体场效应晶体管(MOSFET)的基本温度稳定性试验

This International Standard provides a test procedure for a bias-temperature (BT) stability test of metal-oxide semiconductor, field-effect transistors (MOSFET).

Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)

BS EN 60749-27:2006+A1:2012 半导体器件.机械和气候试验方法.静电放电(ESD)灵敏度测试.机器模型(MM)

Semiconductor devices. Mechanical and climatic test methods. Electrostatic discharge (ESD) sensitivity testing. Machine model (MM)

DLA SMD-5962-87598 REV A-2006 硅单块 晶体管阵列高电流NPN,直线型微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

MICROCIRCUIT, LINEAR, HIGH CURRENT NPN, TRANSISTOR ARRAY, MONOLITHIC SILICON

DLA SMD-5962-90741 REV B-2006 硅单块 晶体管-晶体管逻辑电路兼容输入,带三态输入八进制缓冲器和行驱动线或金属氧化半导体驱动器,双极互补金属氧化物半导体数字微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part orIdentifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.

MICROCIRCUIT, DIGITAL, BIPOLAR CMOS, OCTAL BUFFER AND LINE DRIVERS/MOS DRIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON

IEC PAS 62483:2006 测量锡和锡合金表面须晶生长的试验方法

The methodology presented in this document, see Annex A for process flow, is applicable for studying tin whisker growth from finishes containing a predominance of tin (Sn). This test method may not be sufficient for applications with special requirements, e.g., military or aerospace. Additional requirements may be specified in the appropriate requirements document. The purpose of this PAS is to: ? Provide an industry-standardized suite of tests for measurement and comparison of whisker propensity for different plating or finish chemistries and processes. ? Provide a consistent inspection protocol for tin whisker examination. ? Provide a standard reporting format.

Test method for measuring whisker growth on tin and tin alloy surface finishes

DLA SMD-5962-91586 REV B-2006 硅单块 10-4线优先编码器,小功率肖特基晶体管晶体管逻辑,数字微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

MICROCIRCUIT, DIGITAL, LOW POWER SCHOTTKY TTL, 10-LINE-TO-4-LINE PRIORITY ENCODER, MONOLITHIC SILICON

DLA SMD-5962-91607 REV A-2006 硅单块 晶体管-晶体管逻辑电路兼容输入,三态输出,带同步重设置和一般输入输出插脚的八比特万能转换或储存自动记录器,高速互补金属氧化物半导体,数字微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V).

MICROCIRCUIT, DIGITAL, ADVANCED CMOS, 8-BIT UNIVERSAL SHIFT/STORAGE REGISTER WITH SYNCHRONOUS RESET AND COMMON I/O PINS, THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON

DLA SMD-5962-91530 REV A-2006 硅单块 六进制晶体管晶体管逻辑电路到发射极耦合逻辑的翻译器,发射极耦合逻辑,数字微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V).

MICROCIRCUIT, DIGITAL, ECL, HEX TTL-TO-ECL TRANSLATOR, MONOLITHIC SILICON

DLA SMD-5962-90781 REV B-2006 硅单块 三态缓冲器,高级肖特基晶体管晶体管逻辑,双极数字微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY, TTL, BUFFER, THREE-STATE, MONOLITHIC SILICON

DLA SMD-5962-97559 REV A-2006 八角缓冲器和三状态输出行驱动器晶体管硅单片电路数字双极微电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.

MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY, TTL, OCTAL BUFFERS AND LINE DRIVERS WITH THREE STATE OUTPUTS, MONOLITHIC SILICON

DLA SMD-5962-87697 REV C-2006 硅单块 带锁和晶体管-晶体管逻辑电路兼容输入,高速互补金属氧化物半导体,数字微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes M, Q,and B) and space application (device classes S and V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of radiation hardness assurance (RHA) levels are reflected in the PIN.

MICROCIRCUIT, DIGITAL, ADVANCED CMOS, OCTAL D-TYPE FLIP-FLOP WITH CLOCK ENABLE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON

DLA SMD-5962-87654 REV C-2006 硅单块 晶体管-晶体管逻辑电路兼容,1选8译码器,高速互补金属氧化物半导体,数字微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

MICROCIRCUIT, DIGITAL, FAST CMOS, 1-OF-8 DECODER, TTL COMPATIBLE, MONOLITHIC SILICON

DLA SMD-5962-87628 REV D-2006 硅单块 带三态输出和晶体管-晶体管逻辑电路兼容输入的八进制不可倒转的D型双稳态多谐振荡器触发电路,快速互补金属氧化物半导体,数字微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

MICROCIRCUIT, DIGITAL, FAST CMOS, OCTAL NONINVERTING D-TYPE FLIP-FLOP WITH THREE-STATE OUTPUTS AND TTL COMPATIBLE INPUTS, MONOLITHIC SILICON

DLA SMD-5962-87627 REV C-2006 硅单块 可锁的晶体管-晶体管逻辑电路兼容输入,八进制D型双稳态多谐振荡器触发电路,快速互补金属氧化物半导体,数字微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

MICROCIRCUIT, DIGITAL, FAST CMOS, OCTAL D FLIP-FLOP WITH CLOCK ENABLE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON

IEC 60191-2:1966/AMD15:2006 半导体器件的机械标准化.第2部分:尺寸.修改件15

This standard is Mechanical standardization of semiconductor devices - Part 2: Dimensions; Amendment 15.

Mechanical standardization of semiconductor devices - Part 2: Dimensions; Amendment 15

IEC 60749-26:2006 半导体器件.机械和气候试验方法.第26部分:静电放电敏感性 (ESD)试验.人体模型(HBM)

This part of IEC 60749 establishes a standard procedure for testing and classifying semiconductor devices according to their susceptibility to damage or degradation by exposure to a defined human body model (HBM) electrostatic discharge (ESD). The objective is to provide reliable, repeatable HBM ESD test results so that accurate classifications can be performed. This test method is applicable to all semiconductor devices and is classified as destructive. ESD testing of semiconductor devices is selected from this test method, the machine model (MM) test method (see IEC 60749-27) or other ESD test methods in the IEC 60749 series. The HBM and MM test methods produce similar but not identical results; unless otherwise specified, this test method is the one selected. NOTE Certain clauses in this test method are in accordance with IEC 61340-3-1.

Semiconductor devices - Mechanical and climatic test methods - Part 26: Electrostatic discharge (ESD) sensitivity testing - Human body model (HBM)