L41 半导体二极管 标准查询与下载

SJ 50033/165-2003 半导体分立器件PIN0003型PIN二极管详细规范

Semiconductor discrete device Detail specification of type PIN0003 PIN diode

DLA SMD-5962-90538 REV D-2003 硅单片,四重肖脱基二极管阵列,线性微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

MICROCIRCUIT, LINEAR, QUAD SCHOTTKY DIODE ARRAY, MONOLITHIC SILICON

SJ 50033/150-2002 半导体分立器件.2DW230～236型硅电压基准二极管.详细规范

Semiconductor discrete device Detail specification for silicon voltage-regulator diode for type 2DW230～236

SJ 50033/151-2002 半导体分立器件.2DW14～18型低噪声硅电压基准二极管.详细规范

Semiconductor discrete device Detail specification for low-noise silicon voltage-regulator diodes for types 2DW14～18

ANSI/EIA 307:1992 稳压二极管的噪声电压测量.注:2002-04-00批准

Voltage Regulator Diode Noise Voltage Measurement / Note: Approved 2002-04-00.

JEDEC JESD282B.01-2002 硅二极管整流器.EIA-JESD282-B修订本

This chapter describes the established procedures that are followed in the registration of semiconductor devices and the assignment of type designations. These procedures are discussed from the standpoint of both administration by JEDEC and compliance by the device manufacturer. Technical standards concerning registration are not included but are discussed in Section 3.

Silicon Rectifier Diodes Revision of EIA-JESD282-B

IEC 61643-321:2001 低压浪涌保护装置的元件 第321部分：雪崩击穿二极管（ABD）规范

This part of IEC 61643 is applicable to avalanche breakdown diodes (ABDs) which represent one type of surge protective device component (hereinafter referred to as SPDC) used in the design and construction of surge protective devices connected to low-voltage power distribution systems, transmission, and signalling networks. Test specifications in this standard are for single ABDs consisting of two terminals. However, multiple ABDs may be assembled within a single package defined as a diode array. Each diode within the array can be tested to this specification. This standard contains a series of test criteria for determining the electrical characteristics of the ABD. From the standard test methods described herein, the performance characteristics and ratings of the ABD can be verified or established for specific packaged designs.

Components for low-voltage surge protection devices - Part 321: Specifications for Avalanche Breakdown Diode (ABD)

DLA DSCC-DWG-94029 REV C-2001 双向瞬间抑制二极管组半导电器件

This drawing describes the detail requirements for a 500 Watt, bi-directional transient voltage suppressor diode array.

SEMICONDUCTOR DEVICE, DIODE, TRANSIENT SUPPRESSOR, ARRAY, BI-DIRECTIONAL

DLA DSCC-DWG-94030 REV B-2001 无定流向瞬间抑制二极管组半导电器件

This drawing describes the detail requirements for a 500 Watt, unidirectional transient voltage suppressor diode array.

SEMICONDUCTOR DEVICE, UNIDIRECTIONAL TRANSIENT SUPPRESSOR DIODE ARRAY

IEC 60747-7:2000 半导体装置.第7部分:双极晶体管

The present standard gives the requirements applicable to the following sub-categories of bipolar transistors: - low power signal transistors (excluding switching applications); - power transistors (excluding switching and high-frequency applications); - high-frequency power transistors for amplifier and oscillator applications; - switching transistors.

Semiconductor devices - Part 7: Bipolar transistors

SJ 50033/149-2000 半导体分立器件.2CW100～121型玻璃钝化封装硅电压调整二极管详细规范

Semiconductor discrete devices.Detail specification for type 2CW100～121 glass passivation package silicon voltage-requlator diodes

SJ 20788-2000 半导体二极管热阻抗测试方法

Measurment method for thermal impedance of semiconductor diodes

IEC 60747-4-1:2000 半导体器件 分立器件 第4-1部分:微波二极管和晶体管 微波场效应晶体管 空白详细规范

IEC电子元器件质量评定体系遵循lEC章程并在1EC授权下工作。该体系的日的是确定质量评 定程序，以这种方式使一个参加国按有关规范要求放行的电子元器件无需进一步试验而为其他所有参 加国同样接受。 本空白详细规范是半导体器件的一系列空白详细规范之一，并应与下列国家标准一起使用。 GB／T 4589．1—2006 半导体器件 第10部分：分立器件和集成电路总规范(1EC 60747—10： 1991，1DT) GB／T 12560—1999 半导体器件 分立器件分规范(idt IEC 60747—11：1996) 要求的资料 本页及下页方括号内的数字与下列各项要求的资料相对应，这些资料应填入相应栏中。 详细规范的识别 [1] 授权发布详细规范的国家标准化机构名称。 [2]详细规范的IECQ编号。 [3] 总规范和分规范的编号及版本号。 [4] 详细规范的国家编号、发布日期及国家标准体系要求的任何资料。 器件的识别 [5]器件的类型。 [6] 典型结构和应用资料。如果一种器件有几种应用，则应在详细规范中说明。这些应用的特 性、极限值和检验要求均应予以满足。如果器件是静电敏感型或含有危险材料，如氧化铍，应 在详细规范中给出注意事项。 [7] 外形图和(或)引用有关的外形标准。 [8]质量评定类别。 [9] 能在器件型号之间比较的最重要特性的参考数据。 [在本规范中，方括号里给出的文字是用于指导详细规范的编写者，不应纳入详细规范中。] [在本规范中，“×”表示应在详细规范中规定特性或额定值的值。]

Semiconductor devices - Discrete devices - Part 4-1: Microwave diodes and transistors; Microwave field effect transistors; Blank detail specification

SJ 50033/142-1999 半导体光电子器件.GF4112型绿色发光二极管详细规范

Semiconductor optoelectronic devices.Detail specification for type GF4112 green emitting diode

SJ 50033/144-1999 半导体分立器件.2CW50～78型玻璃钝化封装硅电压调整二极管详细规范

Semiconductor discrete devices.Detail specification for types 2CW50～78 glass passivation package Silicon voltage-regulator diodes

SJ 50033/141-1999 半导体分立器件2EK150型砷化镓高速开关二极管详细规范

Semiconductor discrete devices.Detail specification for type 2EK150 GaAs high speed switching diode

ARMY MIL-PRF-49169 B-1999 发光二极管数组

This specification covers three types of common module, Light-Emitting Diode Arrays, as follows:

LIGHT-EMITTING DIODE ARRAY

WJ 2539-1999 测温二极管测定仪检定规程

Verification Regulations for Temperature Measuring Diode Meter

SJ 50033/138-1998 半导体光电子器件.GF318型黄色发光二极管详细规范

Semiconductor optoelectronic devices.Detail specification for yellow light-emitting diode for type GF318

SJ 50033/139-1998 半导体光电子器件.GF4111型绿色发光二极管详细规范

Semiconductor optoelectronic devices.Detail specification for green light-emitting diode for type GF4111