60747-4-2017
Semiconductor devices – Discrete devices – Part 4: Microwave diodes and transistors (Edition 2.1; Consolidated Reprint)

Dispositifs à semiconducteurs – Dispositifs discrets – Partie 4: Diodes et transistors hyperfréquences (Edition 2.1; Consolidated Reprint)

60747-4-2017 发布历史

This part of IEC 60747 gives requirements for the following categories of discrete devices variable capacitance diodes and snap-off diodes (for tuning@ up-converter or harmonic multiplication@ switching@ limiting@ phased shift@ parametric amplification) mixer diodes and detector diodes avalanche diodes (for direct harmonic generation@ amplification) gunn diodes (for direct harmonic generation) bipolar transistors (for amplification@ oscillation) field-effect transistors (for amplification@ oscillation)

60747-4-2017由IEC - International Electrotechnical Commission 发布于 2017-01-01，并于 2017-02-01 实施。

60747-4-2017 发布之时，引用了标准

• 554 

60747-4-2017的历代版本如下：

• 2000年06月01日 60747-4-1-2000
• 1991年04月01日 60747-4-1991 Dispositifs à semiconducteurs Dispositifs discrets Quatrième partie: Diodes et transistors hyperfréquences (Edition 1.0; Amendment 1: 10-1993; Amendment 2: 04-1999)
• 2000年04月01日 60747-4-2-2000
• 2001年09月01日 60747-4-2001 Dispositifs A Semiconducteurs - Dispositifs Discrets - Partie 4: Dispositifs Hyperfrequences (Edition 1.2: Edition 1: 1991 Consolidated with Amendments 1: 1993 and 2: 1999)
• 2007年08月01日 60747-4-2007 Semiconductor devices – Discrete devices – Part 4: Microwave diodes and transistors (Edition 2.0)
• 2017年01月01日 60747-4-2017 Semiconductor devices – Discrete devices – Part 4: Microwave diodes and transistors (Edition 2.1; Consolidated Reprint)

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标准号

60747-4-2017

发布日期

2017年01月01日

实施日期

2017年02月01日

废止日期

无

中国标准分类号

/

国际标准分类号

/

发布单位

IEC - International Electrotechnical Commission

引用标准

554

适用范围

This part of IEC 60747 gives requirements for the following categories of discrete devices variable capacitance diodes and snap-off diodes (for tuning@ up-converter or harmonic multiplication@ switching@ limiting@ phased shift@ parametric amplification) mixer diodes and detector diodes avalanche diodes (for direct harmonic generation@ amplification) gunn diodes (for direct harmonic generation) bipolar transistors (for amplification@ oscillation) field-effect transistors (for amplification@ oscillation)