31.080 半导体分立器件 标准查询与下载

SJ 50033/105-1996 半导体分立器件.3DK404型功率开关晶体管详细规范

Semiconductor discrete devices.Detail specification for type 3DK404 power switching transistor

SJ 50033/96-1995 半导体分立器件.3DG216型NPN硅小功率差分对晶体管详细规范

Semiconductor discrete devices.Detail specification for type 3DG216 NPN silicon low-power difference matched-pair transistor

SJ 50033/93-1995 半导体分立器件.3DG142型NPN硅高频低噪声小功率晶体管详细规范

Semiconductor discrete devices.Detail specification for type 3DG142 NPN silicon high-frequency Low-noise Low-power transistor

SJ 50033/94-1995 半导体分立器件.3DG143型NPN硅高频低噪声小功率晶体管详细规范

Semiconductor discrete devices.Detail specification for type 3DG143 NPN silicon high-frequency Low-noise Low-power transistor

SJ 50033/95-1995 半导体分立器件.3DG144型NPN硅高频低噪声小功率晶体管详细规范

Semiconductor discrete devices.Detail specification for type 3DG144 NPN silicon high-frequency Low-noise Low-power transistor

JEDEC JESD57-1996 重离子辐射中半导体设备的单粒子效应测量的测试规程

This test method defines the requirements and procedures for Earth-based single-event effects (SEE) testing of integrated circuits.

Test Procedures for the Measurement of Single-Event Effects in Semiconductor Devices from Heavy Ion Irradiation

JEDEC JEP128-1996 Wafer-Level电测的标准探针垫大小和布置指南

This guide applies to double- and single-column arrays of metal probe pads, on a semiconductor wafer or chip, that are electrically connected to one or more test structures.

Guide for Standard Probe Pad Sizes and Layouts for Wafer-Level Electrical Testing

STAS SR CEI 747-4-1995 半导体装置．分离装置．第4部分：微波二极管和晶体管

Semiconductor devices Discrete devices Part 4: Microwave diodes and transistors

SJ 50033/82-1995 半导体分立器件.3DK100型NPN硅小功率开关晶体管详细规范

Semiconductor discrete device.Detail specification for type 3DK100 NPN silicon low-power switching transistor

SJ 50033/81-1995 半导体分立器件.CS0524型砷化镓微波功率场效应晶体管详细规范

Semiconductor discrete devices.Detail specification for type CS0524 GaAs microwave power FET

SJ 50033/80-1995 半导体分立器件.CS0513型砷化镓微波功率场效应晶体管详细规范

Semiconductor discrete devices.Detail specification for type CS0513 GaAs microwave power FET

SJ 50033/78-1995 半导体分立器件.CS0464型砷化镓微波场效应晶体管详细规范

Semiconductor discrete devices.Detail specification for type CS0464 GaAs microwave FET

SJ 50033/75-1995 半导体分立器件.3DG135型硅超高频小功率晶体管详细规范

Semiconductor discrete devices.Detail specification for type 3DG135 Silicon ultra high frequency low-power transistor

SJ 50033/90-1995 半导体分立器件.3DK106型NPN硅小功率开关晶体管详细规范

Semiconductor discrete device.Detail specification for type 3DK106 NPN silicon low-power switching transistor

SJ 50033/91-1995 半导体分立器件.3CD030型低频大功率晶体管详细规范

Semiconductor discrete device.Detail specification for type 3CD030 low-frequency and high-power transistor

SJ 50033/92-1995 半导体分立器件.3CD100型低频大功率晶体管详细规范

Semiconductor discrete device.Detail specification for type 3CD100 low-frequency and high-power transistor

JEDEC JESD51-2-1995 综合电路热测试方法 环境条件 自然对流(静止空气)

The purpose of this document is to outline the environmental conditions necessary to ensure accuracy and repeatability for a standard junction-to-ambient (0 JA) thermal resistance measurement in natural convection. The intent of 0jA measurements is solely for a thermal performance comparison of one package to another in a standardized environment. This methodology is not meant to and will not predict the performance of a package in an applicationspecific environment.

Integrated Circuits Thermal Test Method Environmental Conditions - Natural Convection (Still Air)

JEDEC JESD51-1-1995 集成电路热测方法－电测方法(单半导体器件)

The measurement method described herein is equally applicable to both thermal test die and active intemted circuit devices. Thermal test die, consisting of a heat source and temperature sensor integrated into a semiconductor chip, are commonly used for package thermal characterization efforts, especially when one package is being compared to another. Integrated circuit devices, operating in an active mode that approximates intended applications, are used when specific application-oriented specification information is required.

Integrated Circuit Thermal Measurement Method - Electrical Test Method (Single Semiconductor Device)

JEDEC JESD51-1995 元件套件的热测方法(单半导体器件)

This document provides an overview of the methodology necessary for making meaningful thermal measurements on packages containing single chip semiconductor devices. The actual methodology components are contained in separate detailed documents.

Methodology for the Thermal Measurement of Component Packages (Single Semiconductor Device)

CSN 35 8797 Cast.11 IEC 747-11 Z1:1993 半导体器件．第11部分：分立元件的标准

Semiconductor device. Part 11: Standards for discrete components