31.200 集成电路、微电子学 标准查询与下载



共找到 3192 条与 集成电路、微电子学 相关的标准,共 213

EMC IC modelling - Part 6: Models of integrated circuits for pulse immunity behavioural simulation - Conducted pulse immunity modelling (ICIM-CPI)

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31.200
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发布
2020-09-22
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1   Scope This part of IEC 62433 specifies the framework and methodology for EMC IC macro-modelling. Terms that are commonly used in IEC 62433 (all parts), different modelling approaches, requirements and data-exchange format for each model category that is standardized in this series are defined in this document.

EMC IC modelling - General modelling framework

ICS
31.200
CCS
发布
2020-07-31
实施
2020-07-31

Semiconductor devices — Integrated circuits — Part 11:Sectional specification for semiconductor integrated circuits excluding hybrid circuits

ICS
31.200
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发布
2020-07-23
实施

Semiconductor devices — Integrated circuits — Part 11:Sectional specification for semiconductor integrated circuits excluding hybrid circuits

ICS
31.200
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发布
2020-07-23
实施

1.1 This test method covers the use of 2N2222A silicon bipolar transistors as dosimetry sensors in the determination of neutron energy spectra and as 1-MeV(Si) equivalent displacement damage fluence monitors. 1.2 The neutron displacement in silicon can serve as a neutron spectrum sensor in the range 0.1 to 2.0 MeV and can serve as a substitute when fission foils are not available. It has been applied in the fluence range between 2 × 1012 n/cm2 to 1 × 1014 n/cm2 and should be useful up to 1 × 1015 n/cm2 . This test method details the acquisition and use of 1-MeV(Si) equivalent fluence information for the partial determination of the neutron spectra by using 2N2222A transistors. 1.3 This sensor yields a direct measurement of the silicon 1-MeV equivalent fluence by the transfer technique. 1.4 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard. 1.5 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety, health, and environmental practices and determine the applicability of regulatory limitations prior to use. 1.6 This international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for the Development of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee.

Standard Test Method for Use of 2N2222A Silicon Bipolar Transistors as Neutron Spectrum Sensors and Displacement Damage Monitors

ICS
31.200
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发布
2020-02-01
实施

Semiconductor devices-Integrated circuits-Part 23-1:Hybrid integrated circuits and film structures-Manufacturing line certification-Generic specification

ICS
31.200
CCS
发布
20191231
实施
20191231

Integrated circuits-Manufacturing line approval application guideline

ICS
31.200
CCS
发布
20191231
实施
20191231

Semiconductor devices-Integrated circuits-Part 23-3:Hybrid integrated circuits and film structures-Manufacturing line certification-Manufacturers’ self-audit checklist and report

ICS
31.200
CCS
发布
20191231
实施
20191231

Integrated circuits-Measurements of electromagnetic emissions, 150 kHz to 1 GHz-Part 4:Measurement of conducted emissions-1 W/150 W direct coupling method

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31.200
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发布
20191231
实施
20191231

Semiconductor devices — Integrated circuits —Part 20: Generic specification for film integrated circuits and hybrid film integrated circuits

ICS
31.200
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发布
2019-12-31
实施

Semiconductor devices — Integrated circuits — Part 1: General

ICS
31.200
CCS
发布
2019-12-31
实施

Semiconductor devices — Integrated circuits —Part 20: Generic specification for film integrated circuits and hybrid film integrated circuits

ICS
31.200
CCS
发布
2019-12-31
实施

Semiconductor devices — Integrated circuits — Part 1: General

ICS
31.200
CCS
发布
2019-12-31
实施

Semiconductor devices — Integrated circuits —Part 20: Generic specification for film integrated circuits and hybrid film integrated circuits

ICS
31.200
CCS
发布
2019-12-31
实施

Semiconductor devices — Integrated circuits —Part 20: Generic specification for film integrated circuits and hybrid film integrated circuits

ICS
31.200
CCS
发布
2019-12-31
实施

What is BS EN IEC 62228 ‑ 3 - EMC evaluation of transceivers about?    BS EN IEC 62228 ‑ 3 specifies the test method for evaluation of CAN transceivers. BS EN IEC 62228 ‑ 3 is useful in producing good quality integrated circuits.    BS EN IEC 62228 ‑ 3 specifies test and measurement methods for EMC evaluation of CAN   transceiver ICs under network conditions. BS EN IEC 62228 ‑ 3 defines test configurations, test conditions, test signals, failure criteria, test procedures, test setups and test boards.   Note: BS EN IEC 62228 ‑ 3   is applicable for CAN standard transceivers, CAN transceivers with partial networking functionality, and CAN tr...

Integrated circuits. EMC evaluation of transceivers - CAN transceivers

ICS
31.200
CCS
发布
2019-05-31
实施
2019-05-31

This part of IEC 62433 specifies the framework and methodology for EMC IC macro-modelling. Terms that are commonly used in IEC 62433 (all parts)@ different modelling approaches@ requirements and data-exchange format for each model category that is standardized in this series are defined in this document

EMC IC modelling - Part 1: General modelling framework

ICS
31.200
CCS
发布
2019-03-08
实施
2019-03-12

What is BS EN IEC 61967 ‑ 1 about?    BS EN IEC 61967 ‑ 1 is the first part of the international multi-series standard that focuses on integrated circuits.    BS EN IEC 61967 ‑ 1 provides general information and definitions on the measurement of conducted and radiated electromagnetic disturbances from integrated circuits.    BS EN IEC 61967

Integrated circuits. Measurement of electromagnetic emissions. General conditions and definitions

ICS
31.200
CCS
发布
2019-02-28
实施
2019-02-28

What is BS IEC 63011-3 about?    BS IEC 63011-3 is the third part of the BS IEC 63011 series of standards that specifies a reference model of through-silicon via (TSV) electrical characteristics required for an interface design in three dimensional integrated circuit (3-D IC) to transmit and receive digital data and measurement conditions for resistance and capacitance to specify TSV characteristics in 3-D IC.    Note: 3-D IC specifications covered by BS IEC 63011-3 are the following:   Application: digital consumer and mobile;  Aperating voltage: 0,1 V to 5,0 V,  Operating frequency: less than 2,0 GHz  Note: BS IEC 63011-3 does not describe the equipment for the measurement.  Who is BS IEC 63011-3 for?   BS IEC 63011-3 ...

Integrated circuits. Three dimensional integrated circuits - Model and measurement conditions of through-silicon via

ICS
31.200
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发布
2019-01-31
实施
2019-01-31

What is BS IEC 63011-2 about?    BS IEC 63011-2 is the second part of the BS IEC 63011 series of standards that provides specifications of initial alignment and alignment maintenance between multiple stacked integrated circuits during the die bonding process. These specifications define the alignment keys and operating procedures of the keys.    Note: These specifications apply only if the electrical coupling method of die-to-die alignment is used in the die stacking.  Who is BS IEC 63011-2 for?   BS IEC 63011-2 on stack dies is useful for:   Integrated circuits manufacturers  

Integrated circuits. Three dimensional integrated circuits - Alignment of stacked dies having fine pitch interconnect

ICS
31.200
CCS
发布
2019-01-31
实施
2019-01-31



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