L53 半导体发光器件 标准查询与下载

UL 879 BULLETIN-2007 电子告示牌零件UL安全标准(评审到期日 2007年9月17日)

The following topics are being recirculated: 11. Flexible sign faces, Ozone - Table 4.3, Part II, rows R & T. 12. Flexible sign faces requirements - Table 4.3, Part II, rows R - V. 13. Flexible sign faces, UV & Ozone - Table 4.3, Part II, rows W - Z. 16. Sign body, not enclosure rated, UV & Ozone -Table 4.3, Part II, row O. 17. Sign face trim, UV & Ozone - Table 4.3, Part II, row CC. 20. Retention tests of electrode cover - 3.4.1.11.2.1, 5.12.3.1, 5.12.3.3.

UL Standard for Safety Electric Sign Components COMMENTS DUE: SEPTEMBER 17, 2007

KS C IEC 62341-1-1:2007 有机发光二极管(OLED)显示器.第1-1部分:通用规范

이 규격은 유기발광다이오드(OLED) 디스플레이를 위한 품목규격이다. 이 규격은 IECQ-

Organic light emitting diode (OLED) displays - Part 1-1 : Generic specification

BS IEC 60747-1:2006+A1:2010 半导体器件.总则

Semiconductor devices - General

KS C IEC 62341-1-2:2005 有机发光二极管(OLED)显示器.第1-2部分:术语和文字符号

이 규격은 유기 발광 다이오드(OLED) 디스플레이의 선호되는 용어, 정의 및 기호를 제공

Organic light emitting diode(OLED) displays－Part 2：Terminology and letter symbols

BS EN ISO 11807-2:2005 集成光学.词汇.分类用术语

— for books produced with a view to heavy use over prolonged periods, e.g. reference works;

Integrated optics - Vocabulary - Terms used in classification

BS EN ISO 11807-1:2005 集成光学.词汇.基本术语和符号

— for books of permanent retention;

Integrated optics - Vocabulary - Basic terms and symbols

BS EN ISO 14881:2005 集成光学.接口.有关耦合特性的参数

Integrated optics - Interfaces - Parameters relevant to coupling properties

JEDEC J-STD-020C-2004 非密封固态表面贴装器件湿度／再流焊敏感度分类

This classification procedure applies to all nonhermetic solid state Surface Mount Devices (SMDs) in packages, which, because of absorbed moisture, could be sensitive to damage during solder reflow. The term SMD as used in this document means plastic encapsulated surface mount packages and other packages made with moisture-permeable materials. The categories are intended to be used by SMD producers to inform users (board assembly operations) of the level of moisture sensitivity of their product devices, and by board assembly operations to ensure that proper handling precautions are applied to moisture/reflow sensitive devices. If no major changes have been made to a previously qualified SMD package, this method may be used for reclassification according to 4.2.

Moisture/Reflow Sensitivity Classification for Nonhermetic Solid State Surface Mount Devices

JEDEC JESD33B-2004 测量和利用温度安全系数以确定一条金属化状态线温度的标准方法

This method is intended for determining the temperature coefficient of resistance (at a given temperature) of aluminum- and copper-based thin-film metallizations that are used in microelectronic circuits and devices. This method is intended for estimating a mean temperature of a metallization line stressed in an accelerated electromigration stress test before any irreversible change in resistivity occurs due to the current-density and temperature stresses imposed. This method is intended for using a metallization test line as an ambient-temperature sensor. It uses the predetermined values for the temperature coefficient of resistance of the metallization and the resistance of the test line at a reference temperature. This method is designed for use under conditions where the metallization resistivity is linearly dependent on temperature and where it does not suffer any irreversible changes. For aluminum metallizations, a linear dependence appears to hold until approximately 420 ºC, considerably above anticipated stress temperatures. For copper metallizations, a departure from a linear dependence becomes evident at temperatures as low as 200 °C. A correcting function is used for copper to correct for departures from linearity at these higher temperatures This method is applicable to metallization test lines with or without vias, and with oxide or low-k dielectrics. While the method is designed for use with aluminum- and copper-based metallizations, it may also be used with other metals and alloys for conditions that satisfy the linear dependence and stability stipulations in the previous paragraphs. The metallization structure used in the method may be measured while on a wafer or a part therefrom, or as part of a test chip bonded to a package and electrically accessible via package terminals.

Standard Method for Measuring and Using the Temperature Coefficient of Resistance to Determine the Temperature of a Metallization Line

WJ 2100-2004 硅光电二极管、硅雪崩光电二极管测试方法

Test method for silicon photodiodes and silicon avalanche photodiodes

GEIA SSB-1.003-A-2002 加速因素 SSB-1 附件 军事,航空航天和其他方面用塑料包裹微型电路和半导体指南

This document provides reference information concerning acceleration factors commonly used by device manufacturers to model failure rates in conjunction with statistical reliability monitoring. These acceleration factors are frequently used by OEMs in c

Acceleration Factors Annex to SSB-1, Guidelines for Using Plastic Encapsulated Microcircuits and Semiconductors in Military, Aerospace and Other Rugged Applications

SJ 20644.2-2001 半导体光电子器件 GD101型PIN光电二极管详细规范

Semiconductor optoelectronic devices Detail specification for type GD101 PIN photodiode

SJ 20644.1-2001 半导体光电子器件 GD3550Y型PIN光电二极管详细规范

Semiconductor optoelectronic devices Detail specification for type GD3550Y PIN photodiode

BS IEC 60747-16-2:2001 半导体器件 微波集成电路 频率预分频器

Provides new measuring methods, terminology and letter symbols as well as essential ratings and characteristics.

Semiconductor devices. Microwave integrated circuits. Frequency prescalers

BS IEC 60747-6:2000 分立半导体器件和集成电路.半导体闸流管

To be read in conjunction with IEC 60747-1

Discrete semiconductor devices and integrated circuits - Thyristors

BS IEC 60747-7:2001 分立半导体器件和集成电路.双极晶体管

To be read in conjunction with IEC 60747-1

Discrete semiconductor devices and integrated circuits - Bipolar transistors

BS IEC 60747-6:2001 分立半导体器件和集成电路.半导体闸流管

To be read in conjunction with IEC 60747-1

Discrete semiconductor devices and integrated circuits - Thyristors

SJ 20785-2000 超辐射发光二极管组件测试方法

本标准规定了超辐射发光二极管组件光电参数的测试方法。 本标准适用于超辐射发光二极管组件光电参数测试。

Measuring methods for super luminescent diode module

SJ 20642.7-2000 半导体光电器件GR1325J型长波长发光二极管组件详细规范

Semiconductor opto-electronic devices Detail specification for type GR1325J light emitting diode module

GEIA SSB-1-C-2000 军事,航空航天和其他方面用塑料包裹微型电路和半导体指南

This Engineering Bulletin and its annexes provide guidance to Original Equipment Manufacturers (OEMs) in evaluating device manufacturer flows and in selecting cost effective, standard products that meet the performance objective for potential use in man

Guidelines for Using Plastic Encapsulated Microcircuits and Semiconductors in Military, Aerospace and Other Rugged Applications