H82 元素半导体材料 标准查询与下载

DIN 50445:1992 半导体工艺材料检验.用涡流法无接触测定电阻率.均匀掺杂半导体片

The standard defines the test method for the determination of the specific electrical resistivity of homogeneously doped semiconductor wafers.

Testing of materials for semiconductor technology; contactless determination of the electrical resistivity of semiconductor slices with the eddy current method; homogeneously doped semiconductor wafers

ASTM F1366-92(1997)e1 用次级离子质谱仪测量重掺杂硅基底中氧含量的测试方法

1.1 This test method covers the determination of total oxygen concentration in the bulk of single crystal silicon substrates using secondary ion mass spectrometry (SIMS). 1.2 This test method can be used for silicon in which the dopant concentrations are less than 0.2% (1 X 10 20 atoms/ cm ) for boron, antimony, arsenic, and phosphorus. This test method is especially applicable for silicon that has resistivity between 0.0012 and 1.0 [omega]-cm for -type silicon and between 0.008 and 0.2 [omega]-cm for -type silicon. 1.3 This test method can be used for silicon in which the oxygen content is greater than the SIMS instrumental oxygen background as measured in a float zone silicon sample, but the test method has a useful precision especially when the oxygen content is much greater (approximately 10X to 20X) than the measured oxygen background in the float zone silicon. 1.4 This test method is complementary to infrared absorption spectroscopy that can be used for the measurement of interstitial oxygen in silicon that has resistivity greater than 1.0 [omega]-cm for -type silicon and greater than 0.1 [omega]-cm for -type silicon (see Test Method F1188). The infrared absorption measurement can be extended to between 0.02 and 0.1 [omega]-cm for -type silicon with minor changes in the measurement procedure. 1.5 In principle, different sample surfaces can be used, but the precision estimate was taken from data on chemical-mechanical polished surfaces. 1.6 This standard does not purport to address all of the safety problems, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

Standard Test Method for Measuring Oxygen Concentration in Heavily Doped Silicon Substrates by Secondary Ion Mass Spectrometry

ASTM F1393-92(1997) 用带汞探针的铣床回授靠模工具机测量器测定硅中净载流子密度的测试方法

1.1 This test method covers the measurement of net carrier density and net carrier density profiles in epitaxial and polished bulk silicon wafers in the range from about 4 X 10 13 to about 8 X 10 16 carriers/cm (resistivity range from about 0.1 to about 100 [omega]-cm in n-type wafers and from about 0.24 to about 330 [omega]-cm in p-type wafers). 1.2 This test method requires the formation of a Schottky barrier diode with a mercury probe contact to an epitaxial or polished wafer surface. Chemical treatment of the silicon surface may be required to produce a reliable Schottky barrier diode. (1) The surface treatment chemistries are different for n- and p-type wafers. This test method is sometimes considered destructive due to the possibility of contamination from the Schottky contact formed on the wafer surface; however, repetitive measurements may be made on the same test specimen. 1.3 This test method may be applied to epitaxial layers on the same or opposite conductivity type substrate. This test method includes descriptions of fixtures for measuring substrates with or without an insulating backseal layer. 1.4 The depth of the region that can be profiled depends on the doping level in the test specimen. Based on data reported by Severin (1) and Grove (2), Fig. 1 shows the relationship between depletion depth, dopant density, and applied voltage together with the breakdown voltage of a mercury silicon contact. The test specimen can be profiled from approximately the depletion depth corresponding to an applied voltage of 1 V to the depletion depth corresponding to the maximum applied voltage (200 V or about 80% of the breakdown voltage, whichever is lower). To be measured by this test method, a layer must be thicker than the depletion depth corresponding to an applied voltage of 2 V. 1.5 This test method is intended for rapid carrier density determination when extended sample preparation time or high temperature processing of the wafer is not practical. Note 1-Test Method F419 is an alternative method for determining net carrier density profiles in silicon wafers from capacitance-voltage measurements. This test method requires the use of one of the following structures: (1) a gated or ungated p-n junction diode fabricated using either planar or mesa technology or (2) an evaporated metal Schottky diode. Although this test method was written prior to consideration of the Miller Feedback Method, the Miller Feedback Method has been satisfactorily used in measuring the round robin samples. 1.6 This test method provides for determining the effective area of the mercury probe contact using polished bulk reference wafers that have been measured for resistivity at 23176C in accordance with Test Method F84 or Test Method F673. This test method also includes procedures for calibration of the apparatus. Note 2-An alternative method of determining the effective area of the mercury probe contact that involves the use of reference wafers whose net carrier density has been measured using fabricated mesa or planar p-n junction diodes or evaporated Schottky diodes is not included Note-The light dashed line represents the applied reverse bias voltage at which breakdown occurs in a mercury silicon contact; the heavy dashed line represents 80% of this voltage, it is recommended that the applied reverse bias voltage not exceed this value. The light chain-dot line represents the maximum reverse bias voltage specified in this test method. FIG. 1% Relationships between Depletion Depth, Applied Reverse Bias Voltage, and Dopant Density in this test method but may be used if agreed upon by the parties to the test. 1.7 This standard does not purport to address all of the safety problems, if any, associated with its use. It is the responsibility of the user of t......

Standard Test Method for Determining Net Carrier Density in Silicon Wafers by Miller Feedback Profiler Measurements With a Mercury Probe

DIN 50455-1:1991 半导体工艺材料的检验.表示光致抗蚀剂特性的方法.第1部分:用光学测量法对涂层厚度的测定

The standard defines a method which allows the characterization of photoresists by determining the coating thickness.

Testing of materials for semiconductor technology; methods for characterizing photoresists; determination of coating thickness with optical methods

DIN 50452-2:1991 半导体工艺材料的检验.液体中颗粒分析的试验方法.第2部分:用光学粒子计数器对颗粒的测定

The standard defines the test method for the determination of the concentration of particles in liquids with optical particle counters.

Testing of materials for semiconductor technology; test method for particle analysis in liquids; determination of particles with optical particle counters

DIN 50453-1:1990 半导体工艺材料的检验.蚀刻混合剂浸蚀率的测定.第1部分:单晶硅测重法

Testing of materials for semiconductor technology; determination of etch rates of etching mixtures; silicium monocrystals; gravimetric method

DIN 50453-2:1990 半导体工艺材料的检验.蚀刻混合剂浸蚀率的测定.第2部分:二氧化硅涂层.光学法

The standard defines the test method for the determination of etch rates of etch mixtures on siliciumdioxid coatings.

Testing of materials for semiconductor technology; determination of etch rates of etching mixtures; silicium-dioxid coating; optical method

SJ 3243-1989 磷化铟单晶棒及片

本标准规定了液封直拉法(LEC)生长的磷化铟单晶棒、片的牌号命名方法、技术要求、试验方法、检验规则、标志、包装、运输和贮存。 本标准适用于制造光电器件、微波器件、集成电路衬底用的液封直拉磷化铟单晶棒、片。

Indium phosphide single-crystal bar and wafers

DIN 50443-1:1988 半导体工艺使用材料的检验.第1部分:用X射线外形测量法检测半导体单晶硅中晶体缺陷和不均匀性

This standard determines the methods for the recognition of defects and inhomogeneities in semiconductor silicon single crystals by x-ray topography.

Testing of materials for use in semiconductor technology; detection of crystal defects and inhomogeneities in silicon single crystals by X-ray topography

DIN 50431:1988 半导体材料的试验.用探针直线排列的四探针/直流法测量单晶硅或锗单晶体的电阻率

The standard determines a test method for the measurement of the electrical resistivity of silicon or germanium single crystals by means of the four-point-probe direct current method with collinear four probe array.

Testing of semiconductor materials; measurement of the resistivity of silicon or germanium single crystals by means of the four probe/direct current method with collinear array

DIN 50435:1988 半导体材料试验:采用四探针/直流法测量硅片和锗片电阻率的径向变化

Testing of semiconductor materials; determination of the radial resistivity variation of silicon or germanium slices by means of the four-probe/direct current method

YS/T 209-1994 硅材料原生缺陷图谱

In-situ defect map of silicon materials

ASTM F672-88(1995)e1 用分布电阻探头测量硅晶片垂直于表面的纵断面电阻率的标准试验方法

1.1 This test method covers measurement of the resistivity profile perpendicular to the surface of a silicon wafer of known orientation and type. Note 1--This test method may also be applicable to other semiconductor materials, but feasibility and precision have been evaluated only for silicon and germanium.1.2 This test method may be used on epitaxial films, substrates, diffused layers, or ion-implanted layers, or any combination of these.1.3 This test method is comparative in that the resistivity profile of an unknown specimen is determined by comparing its measured spreading resistance value with those of calibration standards of known resistivity. These calibration standards must have the same surface preparation, conductivity type, and crystallographic orientation as the unknown specimen.1.4 This test method is intended for use on silicon wafers in any resistivity range for which there exist suitable standards. Polished, lapped, or ground surfaces may be used.1.5 This test method is destructive in that the specimen must be beveled.1.6 Correction factors, which take into account the effects of boundaries or local resistivity variations with depth, are needed prior to using calibration data to calculate resistivity from the spreading resistance values. Note 2--This test method extends Method F525 to depth profiling.Note 3--This test method provides means for directly determining the resistivity profile of a silicon specimen normal to the specimen surface. Unlike Test Methods F84, F374, F1392, and F1393, it can provide lateral spatial resolution of resistivity on the order of a few micrometres, and an in-depth spatial resolution on the order of 10 nm (100 A). This test method can be used to profile through p-n junctions.1.7 This test method is primarily a measurement for determining the resistivity profile in a silicon wafer. However, common practice is to convert the resistivity profile information to a density profile. For such purposes, a conversion between resistivity and majority carrier density is provided in Appendix X2.1.8 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use. Specific hazard statements are given in Section 9.

Standard Test Method for Measuring Resistivity Profiles Perpendicular to the Surface of a Silicon Wafer Using a Spreading Resistance Probe

DIN 50434:1986 半导体工艺材料的检验.对(111)和(100)表面采用蚀刻技术的单晶硅的晶体结构缺陷的测定

This standard defines a method for the determination of the crystallographic perfection of mono-crystalline silicon by etch techniques on {111}- and {100}-surfaces. It is applicable to n-type or p-typed doped silicium with specific resistance down to 0,005cm and to dislocation densities within 100 and 100000 cm.#,,#

Testing of materials for semiconductor technology; detection of crystal defects in monocrystalline silicon using etching techniques on {111} and {100} surfaces

DIN 50441-3:1985 半导体工艺材料的检验.第3部分:半导体切片几何尺寸的测量.第3部分:用多射线干涉法测定抛光切片的平面偏差

Testing of materials for semiconductor technology; measurement of the geometric dimensions of semiconductor slices; determination of flatness deviation of polished slices by means of the multiple beam interference

DIN 50439:1982 半导体技术材料的试验.用电容--电压法和水银接点确定单晶层半导体材料中掺杂剂的浓度分布曲线

Testing of materials for semiconductor technology; determination of the dopant concen-tration profile of single crystalline semiconductor material by means of the capacitance-voltage method and mercury contactEssais des matériaux pour la technologie semi

Testing of materials for semiconductor technology; determination of the dopant concentration profile of single crystalline semiconductor material by means of the capacitancevoltage method and mercury contact

DIN 50433-3:1982 半导体工艺材料的检验.第3部分:采用劳埃反向散射法测定单晶体取向

Testing of materials for semiconductor technology; determination of the orientation of single crystals by means of Laue back scatteringEssais de matériaux pour la technologie semi-conducteurs; détermination de l'orientation de monocristaux par méthode pa

Testing of materials for semiconductor technology; determination of the orientation of single crystals by means of Laue back scattering

DIN 50442-1:1981 半导体无机材料的检验.圆形单晶体半导体薄片表面结构的测定.第1部分:切割和研磨的薄片

Testing of semi-conductive inorganic materials; determination of the surface structure of circular monocrystalline semi-conductive slices; as-cut and lapped slicesEssai des matériaux semi-conducteurs minéraux; détermination de la structure de la surface

Testing of semi-conductive inorganic materials; determination of the surface structure of circular monocrystalline semi-conductive slices; as-cut and lapped slices

DIN 50437:1979 半导体无机材料的试验.用红外线干涉法测量硅外延生长层的的厚度

Testing of semi-conductive inorganic materials; measuring the thickness of silicon epitaxial layer thickness by infrared interference methodEssais des matériaux semi-conducteurs minéraux; mesure de l'épaisseur des depots epitaxiques de silicium au moyen

Testing of semi-conductive inorganic materials; measuring the thickness of silicon epitaxial layer thickness by infrared interference method

DIN 50433-2:1976 无机半导体材料的检验.第2部分:采用反射光影法测定单晶体取向

Testing of semi-conducting inorganic materials; determining the orientation of single crystals by means of optical reflection figureEssai des matériaux semi-conducteurs minéraux; détermination de l'orientation des monocristaux par reflexion optique

Testing of semi-conducting inorganic materials; determining the orientation of single crystals by means of optical reflection figure